Semiconductor Wafer Chuck Plate

Name: Semiconductor Wafer Chuck Plate | Vacuum Chuck for Wafer Processing - Frigate
Price: 249.00 USD
Availability: InStock

Semiconductor Wafer Chuck Plate performance is highly dependent on material response to thermal and mechanical loads encountered during etch, deposition, and annealing processes. Plates fabricated from silicon-infiltrated carbon composites or engineered ceramics exhibit near-zero thermal deformation due to coefficient of thermal expansion (CTE) matching with silicon wafers. These materials enable the Semiconductor Wafer Chuck Plate to maintain dimensional integrity under thermal cycling up to 400°C and vacuum-induced mechanical stress, ensuring reliable wafer positioning during high-throughput operations.

Material Specification

Aluminum 6061-T6 (AMS 4025), Stainless Steel 316L (ASTM A240), Molybdenum (ASTM B386)

Dimensional Tolerances

±0.005mm (Critical Features), ±0.01mm (Overall Profile), Thickness – ±0.002mm

Surface Finish Requirement

Ra ≤0.1µm (Wafer Contact), Ra ≤0.4µm (Non-Critical), Lapped Finish (Optional, Ra ≤0.05µm)

Coating/Plating Specification

Hard Anodized (Al, MIL-A-8625 Type III), Electroless Nickel (5-10µm, ASTM B733), Gold Plated (1-3µm, Optional)

Certification Standard

ISO 9001, SEMI S2/S8, RoHS/REACH Compliant, UL 94 V-0 (Flammability)

Product Description

Semiconductor Wafer Chuck Plate must maintain ultra-flat surfaces to support critical photolithography and metrology stages. Surface non-uniformities lead to focal shift, overlay inaccuracies, and CD variation. Using precision CNC machining, dual-side lapping, and laser interferometry, the Semiconductor Wafer Chuck Plate is manufactured with a flatness tolerance better than 1 µm across its diameter. High stiffness and optimized support structures ensure minimal Z-axis deflection under load, preserving vertical alignment during high-resolution pattern transfer.

Thermal Conductivity

Al – 150-180 W/m·K, Mo – 138 W/m·K, Custom Thermal Management Solutions Available

Surface Flatness/Texture

Total Thickness Variation (TTV) ≤0.0005mm, Nanotextured (Optional, 50-200nm Features)

Hardness Requirement

Anodized Al – 60-70 HRC, SS – 85-95 HRB, Molybdenum – 200-250 HV

Mechanical Strength

Tensile Strength ≥240MPa (Al), Fatigue Life – 10⁶ Cycles, Impact Resistance – 5J

Flatness & Parallelism

Flatness ≤0.001mm/m (Vacuum Chuck), Parallelism ≤0.003mm, Perpendicularity ≤0.005°

Technical Advantages

Vacuum integrity is essential to prevent wafer shift or bowing during plasma, ALD, or ion implant processes. The Semiconductor Wafer Chuck Plate integrates zoned micro-channel vacuum networks that deliver uniform negative pressure across the wafer backside. These channels are fabricated with micron-level precision, ensuring laminar evacuation and minimal pressure gradients. The Semiconductor Wafer Chuck Plate maintains leak rates below 1E-7 sccm and features chemically stable sealing interfaces, reducing particulate generation and chamber contamination during extended cycle operations.

Semiconductor Wafer Chuck Plate thermal properties directly impact within-die temperature gradients during high-energy processing. High-conductivity substrates such as aluminum nitride or embedded graphite layers facilitate rapid lateral heat dispersion, achieving in-plane thermal uniformity with deviations below ±0.5°C. The Semiconductor Wafer Chuck Plate may also incorporate internal cooling channels or resistive heating elements to actively manage substrate temperature, maintaining isothermal conditions critical for film deposition uniformity and dopant diffusion accuracy.

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Industry Applications

Photolithography Equipment

Maintains wafer flatness and Z-axis stability for critical focus control during optical and EUV patterning stages.

Etch Chambers

Supports uniform plasma distribution and precise wafer clamping under high-vacuum, high-temperature anisotropic and isotropic etch processes.

Chemical Vapor Deposition (CVD)

Ensures thermal uniformity across wafer surface during high-temperature thin film growth of dielectric and conductive layers.

Physical Vapor Deposition (PVD)

Provides mechanical support and thermal conduction for metal layer deposition under high-vacuum magnetron sputtering conditions.

Metrology Systems

Delivers nanometer-level surface stability for accurate overlay, critical dimension, and surface topology measurements.

Wafer Inspection Tools

Minimizes vibration and planarity deviation during high-resolution defect inspection and particle contamination analysis.

Dielectric Isolation and Charge Management

Electrostatic buildup on wafer surfaces can interfere with device structures or induce dielectric breakdown during plasma exposure. The Semiconductor Wafer Chuck Plate addresses this by incorporating low-permittivity dielectric layers and embedded ground paths that dissipate stray charges without interfering with device geometry.

Semiconductor Wafer Chuck Plate surfaces are regularly exposed to halogenated gases, reactive ion species, and aggressive cleaning chemistries. Materials such as coated alumina, silicon carbide, and diamond-like carbon (DLC) offer high resistance to chemical degradation and maintain surface integrity over thousands of cycles.

Having Doubts? Our FAQ

Check all our Frequently Asked Question

How does Frigate ensure uniform temperature control across the Semiconductor Wafer Chuck Plate?

Frigate uses high thermal conductivity materials like aluminum nitride or pyrolytic graphite in the chuck body. These materials help spread heat evenly across the wafer surface. Internal thermal simulations are done to optimize material placement and thickness. This ensures minimal temperature variation during high-energy deposition or annealing.

What steps does Frigate take to ensure vacuum integrity in the chuck plate?

Frigate designs micro-channel vacuum paths with uniform distribution and minimal flow restriction. Channel geometry is optimized using fluid dynamics to avoid localized pressure drops. All sealing surfaces are polished to atomic-level smoothness. The final assembly is tested for helium leak rates below 1E-7 sccm.

What materials does Frigate use to enhance chemical resistance in harsh plasma environments?

Frigate selects materials like coated alumina, DLC, and SiC based on chamber chemistry and process gas exposure. These materials resist erosion from halogens and reactive plasma species. Surface treatments are applied to prevent particle generation. Every chuck plate undergoes compatibility testing before integration.

How does Frigate control electrostatic behavior in ESC-type wafer chuck plates?

Frigate integrates custom bipolar electrode configurations with high-voltage insulation layers. Surface dielectric properties are tuned to control clamping voltage and charge retention. Electrical simulation ensures no arcing or field distortion near active die zones. Grounding paths are embedded to manage stray charge dissipation.

What wafer sizes and tool platforms does Frigate support for Semiconductor Wafer Chuck Plates?

Frigate manufactures plates for 150 mm, 200 mm, and 300 mm wafers across litho, etch, CVD, and inspection tools. Mounting hole patterns and interfaces are customized to match OEM platform requirements. Positional tolerances are kept within ±10 μm for robotic alignment. Each plate is tool-specific and verified for chamber compatibility.

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Registered Office

10-A, First Floor, V.V Complex, Prakash Nagar, Thiruverumbur, Trichy-620013, Tamil Nadu, India.

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9/1, Poonthottam Nagar, Ramanandha Nagar, Saravanampatti, Coimbatore-641035, Tamil Nadu, India. ㅤ

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